1/9 november 2004 STF40NF06 n-channel 60v - 0.024 ? - 23a - to-220fp stripfet?ii mosfet table 1: general features typical r ds (on) = 0.024 ? exceptional dv/dt capability low gate charge at 100c application oriented characterization 100% avalanche tested description this mosfet is the latest development of stmi- croelectronics unique ?single feature size ?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications dc-dc & dc-ac converters motor control, audio amplifiers high current, high speed switching solenoid and relay drivers table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d STF40NF06 60 v < 0.028 ? 23 a to-220fp 1 2 3 part number marking package packaging STF40NF06 f40nf06 to-220fp tube rev.2
STF40NF06 2/9 table 3: absolute maximum ratings (1) i sd 40a, di/dt 300a/s, v dd v (br)dss , t j t jmax. . (2) starting t j =25 c, i d =20a, v dd =30v ( ) pulse width limited by safe operating area table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: off table 6: on symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k ? ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 23 a i d drain current (continuous) at t c = 100 c 16 a i dm ( ) drain current (pulsed) 92 a p tot total dissipation at t c = 25 c 30 w derating factor 0.2 w/ c dv/dt (1) peak diode recovery voltage slope 10 v/ns e as (2) single pulse avalanche energy 250 mj v iso insulation withstand voltage (dc) 2500 v t stg storage temperature ? 55 to 175 c t j operating junction temperature rthj-case thermal resistance junction-case max 5.0 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 11.5 a 0.024 0.028 ?
3/9 STF40NF06 electrical characteristics (continued) table 7: dynamic table 8: switching on table 9: switching off table 10: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 30 v i d =11.5a 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 920 225 80 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30v, i d = 20a r g =4.7 ? v gs = 10v (see figure 16) 27 11 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48v, i d = 10a, v gs = 10v 32 6.5 15 43 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 30v, i d = 20a, r g =4.7 ?, v gs = 10v (see figure 16) 27 11 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 23 a i sdm (2) source-drain current (pulsed) 92 a v sd (1) forward on voltage i sd = 23a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 40a, di/dt = 100a/s, v dd = 10v, t j = 150 c (see test circuit, figure 5) 63 150 4.8 ns nc a
STF40NF06 4/9 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/9 STF40NF06 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: source-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized breakdown voltage vs temperature
STF40NF06 6/9 figure 15: unclamped inductive load test cir- cuit figure 16: switching times test circuit for resistive load figure 17: test circuit for inductive load switching and diode recovery times figure 18: unclamped inductive wafeform figure 19: gate charge test circuit
7/9 STF40NF06 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
STF40NF06 8/9 table 11: revision history date revision description of changes 07-oct-2004 1 first release 11-nov-2004 2 final datasheet
9/9 STF40NF06 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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